EM6AA160TSE-4G

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  • image of 存储器>EM6AA160TSE-4G
EM6AA160TSE-4G
Memory
Etron Technology, Inc.
IC DRAM 256MBIT
-
Tape & Reel (TR)
100
-
: 3.3619
: 100

1

3.3619

3.3619

image of 存储器>EM6AA160TSE-4G
image of 存储器>EM6AA160TSE-4G
EM6AA160TSE-4G
EM6AA160TSE-4G
Memory
Etron Technology, Inc.
IC DRAM 256MBIT
-
Tape & Reel (TR)
100
TYPEDESCRIPTION
MfrEtron Technology, Inc.
Series-
PackageTape & Reel (TR)
Part StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - DDR
Memory Size256Mb (16M x 16)
Memory InterfaceParallel
Clock Frequency250 MHz
Write Cycle Time - Word, Page15ns
Access Time700 ps
Voltage - Supply2.3V ~ 2.7V
Operating Temperature0°C ~ 70°C (TA)
Mounting TypeSurface Mount
Package / Case66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package66-TSOP II
Base Product NumberEM6AA160
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