EM6HE16EWAKG-10H

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  • image of 存储器>EM6HE16EWAKG-10H
EM6HE16EWAKG-10H
Memory
Etron Technology, Inc.
IC DRAM 4GBIT P
-
卷带(TR) - -
1447
-
: 20.16
: 1447

1

20.16

20.16

10

18.56

185.6

25

18.1764

454.41

50

18.105

905.25

100

16.2449

1624.49

250

15.75928

3939.82

500

14.98264

7491.32

image of 存储器>EM6HE16EWAKG-10H
image of 存储器>EM6HE16EWAKG-10H
EM6HE16EWAKG-10H
EM6HE16EWAKG-10H
Memory
Etron Technology, Inc.
IC DRAM 4GBIT P
-
卷带(TR) - -
1447
TYPEDESCRIPTION
MfrEtron Technology, Inc.
Series-
PackageTape & Reel (TR)
Part StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - DDR3L
Memory Size4Gb (256M x 16)
Memory InterfaceParallel
Clock Frequency933 MHz
Write Cycle Time - Word, Page15ns
Access Time20 ns
Voltage - Supply1.283V ~ 1.45V
Operating Temperature0°C ~ 95°C (TC)
Mounting TypeSurface Mount
Package / Case96-TFBGA
Supplier Device Package96-FBGA (7.5x13.5)
Base Product NumberEM6HE16
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jocelyn@cseker.com
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