EM6OE16NWAKA-07IH

  • image of 存储器>EM6OE16NWAKA-07IH
  • image of 存储器>EM6OE16NWAKA-07IH
EM6OE16NWAKA-07IH
Memory
Etron Technology, Inc.
4GB (256MX16) D
-
- - -
2500
-
: 16.5
: 2500

2

16.5

33

image of 存储器>EM6OE16NWAKA-07IH
image of 存储器>EM6OE16NWAKA-07IH
EM6OE16NWAKA-07IH
EM6OE16NWAKA-07IH
Memory
Etron Technology, Inc.
4GB (256MX16) D
-
- - -
2500
PDF(1)
TYPEDESCRIPTION
MfrEtron Technology, Inc.
Series-
PackageTape & Reel (TR)
Part StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM
Memory Size4Gb (256M x 16)
Memory InterfacePOD
Clock Frequency1.333 GHz
Write Cycle Time - Word, Page15ns
Access Time18 ns
Voltage - Supply1.14V ~ 1.26V
Operating Temperature-40°C ~ 95°C (TC)
Mounting TypeSurface Mount
Package / Case96-TFBGA
Supplier Device Package96-FBGA (7.5x13.5)
captcha

13684961935

jocelyn@cseker.com
0