GD25Q256DYIGR

  • image of 存储器>GD25Q256DYIGR
  • image of 存储器>GD25Q256DYIGR
GD25Q256DYIGR
Memory
GigaDevice Semiconductor (HK) Limited
IC FLASH 256MBI
-
Tape & Reel (TR) Cut Tape (CT)
11829
-
: 5.36297
: 11829

3

5.36297

16.08891

image of 存储器>GD25Q256DYIGR
image of 存储器>GD25Q256DYIGR
GD25Q256DYIGR
GD25Q256DYIGR
Memory
GigaDevice Semiconductor (HK) Limited
IC FLASH 256MBI
-
Tape & Reel (TR) Cut Tape (CT)
11829
PDF(1)
TYPEDESCRIPTION
MfrGigaDevice Semiconductor (HK) Limited
Series-
PackageTape & Reel (TR)
Part StatusNot For New Designs
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NOR
Memory Size256Mb (32M x 8)
Memory InterfaceSPI - Quad I/O
Clock Frequency104 MHz
Write Cycle Time - Word, Page50µs, 2.4ms
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (6x8)
Base Product NumberGD25Q256
captcha

13684961935

jocelyn@cseker.com
0