GD25Q40CEIGR

  • image of 存储器>GD25Q40CEIGR
  • image of 存储器>GD25Q40CEIGR
GD25Q40CEIGR
Memory
GigaDevice Semiconductor (HK) Limited
IC FLASH 4MBIT
-
Tape & Reel (TR) Cut Tape (CT)
2214
-
: 0.96
: 2214

1

0.96

0.96

10

0.938

9.38

25

0.864

21.6

50

0.8618

43.09

100

0.7635

76.35

250

0.75864

189.66

500

0.7429

371.45

image of 存储器>GD25Q40CEIGR
image of 存储器>GD25Q40CEIGR
GD25Q40CEIGR
GD25Q40CEIGR
Memory
GigaDevice Semiconductor (HK) Limited
IC FLASH 4MBIT
-
Tape & Reel (TR) Cut Tape (CT)
2214
PDF(1)
TYPEDESCRIPTION
MfrGigaDevice Semiconductor (HK) Limited
Series-
PackageTape & Reel (TR)
Part StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NOR
Memory Size4Mb (512K x 8)
Memory InterfaceSPI - Quad I/O
Clock Frequency104 MHz
Write Cycle Time - Word, Page50µs, 2.4ms
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case8-XFDFN Exposed Pad
Supplier Device Package8-USON (2x3)
Base Product NumberGD25Q40
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