GD25Q80ETIGR

  • image of 存储器>GD25Q80ETIGR
  • image of 存储器>GD25Q80ETIGR
GD25Q80ETIGR
Memory
GigaDevice Semiconductor (HK) Limited
8MBIT NOR FLASH
-
Tape & Reel (TR) Cut Tape (CT)
11006
-
: 1.1
: 11006

1

1.1

1.1

10

1.078

10.78

25

0.9992

24.98

50

0.9966

49.83

100

0.881

88.1

250

0.87544

218.86

500

0.85884

429.42

image of 存储器>GD25Q80ETIGR
image of 存储器>GD25Q80ETIGR
GD25Q80ETIGR
GD25Q80ETIGR
Memory
GigaDevice Semiconductor (HK) Limited
8MBIT NOR FLASH
-
Tape & Reel (TR) Cut Tape (CT)
11006
TYPEDESCRIPTION
MfrGigaDevice Semiconductor (HK) Limited
Series-
PackageTape & Reel (TR)
Part StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NOR
Memory Size8Mb (1M x 8)
Memory InterfaceSPI - Quad I/O
Clock Frequency133 MHz
Write Cycle Time - Word, Page70µs, 2ms
Access Time7 ns
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP
Base Product NumberGD25Q80
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