GD5F1GQ4UFYIGR

  • image of 存储器>GD5F1GQ4UFYIGR
  • image of 存储器>GD5F1GQ4UFYIGR
GD5F1GQ4UFYIGR
Memory
GigaDevice Semiconductor (HK) Limited
IC FLASH 1GBIT
-
Tape & Reel (TR) Cut Tape (CT)
6739
-
: 9.68
: 6739

1

9.68

9.68

10

8.778

87.78

25

8.5828

214.57

50

8.5396

426.98

100

7.6583

765.83

250

7.62436

1906.09

500

7.34498

3672.49

image of 存储器>GD5F1GQ4UFYIGR
image of 存储器>GD5F1GQ4UFYIGR
GD5F1GQ4UFYIGR
GD5F1GQ4UFYIGR
Memory
GigaDevice Semiconductor (HK) Limited
IC FLASH 1GBIT
-
Tape & Reel (TR) Cut Tape (CT)
6739
PDF(1)
TYPEDESCRIPTION
MfrGigaDevice Semiconductor (HK) Limited
Series-
PackageTape & Reel (TR)
Part StatusNot For New Designs
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND
Memory Size1Gb (128M x 8)
Memory InterfaceSPI - Quad I/O
Clock Frequency120 MHz
Write Cycle Time - Word, Page700µs
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (6x8)
Base Product NumberGD5F1GQ4
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