TC58BYG0S3HBAI4

  • image of 存储器>TC58BYG0S3HBAI4
  • image of 存储器>TC58BYG0S3HBAI4
TC58BYG0S3HBAI4
Memory
Kioxia America, Inc.
IC FLASH 1GBIT
-
Tray
28
-
: 7.76
: 28

1

7.76

7.76

10

6.961

69.61

25

6.5812

164.53

210

5.70248

1197.5208

420

5.41619

2274.7998

630

4.85825

3060.6975

image of 存储器>TC58BYG0S3HBAI4
image of 存储器>TC58BYG0S3HBAI4
TC58BYG0S3HBAI4
TC58BYG0S3HBAI4
Memory
Kioxia America, Inc.
IC FLASH 1GBIT
-
Tray
28
PDF(1)
TYPEDESCRIPTION
MfrKioxia America, Inc.
SeriesBenand™
PackageTray
Part StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND (SLC)
Memory Size1Gb (128M x 8)
Memory Interface-
Write Cycle Time - Word, Page25ns
Voltage - Supply1.7V ~ 1.95V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case63-VFBGA
Supplier Device Package63-TFBGA (9x11)
Base Product NumberTC58BYG0
captcha

13684961935

jocelyn@cseker.com
0