TC58BYG0S3HBAI6

  • image of 存储器>TC58BYG0S3HBAI6
  • image of 存储器>TC58BYG0S3HBAI6
TC58BYG0S3HBAI6
Memory
Kioxia America, Inc.
IC FLASH 1GBIT
-
Tray
29
-
: 6.32
: 29

1

6.32

6.32

10

5.681

56.81

25

5.5968

139.92

40

5.5795

223.18

80

4.98263

398.6104

338

4.82068

1629.38984

676

4.80192

3246.09792

image of 存储器>TC58BYG0S3HBAI6
image of 存储器>TC58BYG0S3HBAI6
TC58BYG0S3HBAI6
TC58BYG0S3HBAI6
Memory
Kioxia America, Inc.
IC FLASH 1GBIT
-
Tray
29
PDF(1)
TYPEDESCRIPTION
MfrKioxia America, Inc.
SeriesBenand™
PackageTray
Part StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND (SLC)
Memory Size1Gb (128M x 8)
Memory InterfaceParallel
Write Cycle Time - Word, Page25ns
Access Time25 ns
Voltage - Supply1.7V ~ 1.95V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case67-VFBGA
Supplier Device Package67-VFBGA (6.5x8)
Base Product NumberTC58BYG0
captcha

13684961935

jocelyn@cseker.com
0