TC58BYG1S3HBAI4

  • image of 存储器>TC58BYG1S3HBAI4
  • image of 存储器>TC58BYG1S3HBAI4
TC58BYG1S3HBAI4
Memory
Kioxia America, Inc.
IC FLASH 2GBIT
-
Tray
210
-
: 10.22
: 210

1

10.22

10.22

10

9.181

91.81

25

8.6808

217.02

210

7.52195

1579.6095

420

7.13902

2998.3884

630

6.40248

4033.5624

image of 存储器>TC58BYG1S3HBAI4
image of 存储器>TC58BYG1S3HBAI4
TC58BYG1S3HBAI4
TC58BYG1S3HBAI4
Memory
Kioxia America, Inc.
IC FLASH 2GBIT
-
Tray
210
PDF(1)
TYPEDESCRIPTION
MfrKioxia America, Inc.
SeriesBenand™
PackageTray
Part StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND (SLC)
Memory Size2Gb (256M x 8)
Memory Interface-
Write Cycle Time - Word, Page25ns
Voltage - Supply1.7V ~ 1.95V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case63-VFBGA
Supplier Device Package63-TFBGA (9x11)
Base Product NumberTC58BYG1
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