TH58BYG2S3HBAI6

  • image of 存储器>TH58BYG2S3HBAI6
  • image of 存储器>TH58BYG2S3HBAI6
TH58BYG2S3HBAI6
Memory
Kioxia America, Inc.
IC FLASH 4GBIT
-
Tray
312
-
: 11.74
: 312

1

11.74

11.74

10

10.704

107.04

25

10.5016

262.54

40

10.4235

416.94

80

9.358

748.64

338

9.32047

3150.31886

676

8.73791

5906.82716

image of 存储器>TH58BYG2S3HBAI6
image of 存储器>TH58BYG2S3HBAI6
TH58BYG2S3HBAI6
TH58BYG2S3HBAI6
Memory
Kioxia America, Inc.
IC FLASH 4GBIT
-
Tray
312
TYPEDESCRIPTION
MfrKioxia America, Inc.
SeriesBenand™
PackageTray
Part StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND (SLC)
Memory Size4Gb (512M x 8)
Memory InterfaceParallel
Write Cycle Time - Word, Page25ns
Access Time25 ns
Voltage - Supply1.7V ~ 1.95V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case67-VFBGA
Supplier Device Package67-VFBGA (6.5x8)
Base Product NumberTH58BYG2
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